The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

May. 21, 2013
Applicants:

Sheila F. Chopin, Austin, TX (US);

Min Ding, Austin, TX (US);

Varughese Mathew, Austin, TX (US);

Scott S. Roth, Austin, TX (US);

Inventors:

Sheila F. Chopin, Austin, TX (US);

Min Ding, Austin, TX (US);

Varughese Mathew, Austin, TX (US);

Scott S. Roth, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 23/3192 (2013.01); H01L 24/13 (2013.01); H01L 24/45 (2013.01); H01L 2224/0218 (2013.01); H01L 2224/034 (2013.01); H01L 2224/03005 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/03015 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/14 (2013.01);
Abstract

A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.


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