The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Nov. 10, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/08 (2006.01); G11C 8/08 (2006.01); G11C 8/18 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 16/34 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 8/08 (2013.01); G11C 8/18 (2013.01); G11C 29/025 (2013.01); G11C 29/50012 (2013.01); G11C 16/3454 (2013.01); G11C 2029/1202 (2013.01);
Abstract
An operating method of a memory system which includes a nonvolatile memory device including memory cells connected to a plurality of word lines, the operating method including pre-charging a selected one of the plurality of word lines; detecting a variation in a voltage or a current on the selected word line after the selected word line is floated; generating runtime failure information according to the detected variation; and determining a state of the selected word line or a state of a memory block including the selected word line, based on the runtime failure information.