The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Mar. 14, 2014
Applicant:

AZ Electronic Materials (Luxembourg) S.a.r.l., Somerville, NJ (US);

Inventors:

Tatsuro Nagahara, Shizuoka, JP;

Takashi Sekito, Shizuoka, JP;

Kazuma Yamamoto, Shizuoka, JP;

Masakazu Kobayashi, Shizuoka, JP;

Noboru Satake, Shizuoka, JP;

Masahiro Ishii, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/40 (2006.01); G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); C08L 33/14 (2006.01); C09D 139/04 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08L 33/14 (2013.01); C09D 139/04 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); H01L 21/0274 (2013.01); H01L 21/76816 (2013.01);
Abstract

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.


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