The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Jun. 02, 2015
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Masaki Ohashi, Jyoetsu, JP;

Masahiro Fukushima, Jyoetsu, JP;

Kenichi Oikawa, Jyoetsu, JP;

Koji Hasegawa, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 1/20 (2012.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 1/20 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/09 (2013.01); G03F 7/11 (2013.01); G03F 7/2041 (2013.01); G03F 7/2053 (2013.01); G03F 7/2059 (2013.01); G03F 7/30 (2013.01); G03F 7/38 (2013.01);
Abstract

A photo acid generator represented (a), wherein Rand Reach independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent hydrocarbon group having 3 to 20 carbon atoms which may be substituted with or interposed by a heteroatom; Rrepresents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and Rand Rmay be mutually bonded to form a ring together with the sulfur atom in the formula. A photo acid generator can give a pattern excellent in resolution and LER and having a rectangular profile in the photolithography using a high energy beam like ArF excimer laser light, EUV, and electron beam as a light source.


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