The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Sep. 02, 2011
Applicants:

Fumimasa Horikiri, Nagareyama, JP;

Kenji Shibata, Tsukuba, JP;

Kazufumi Suenaga, Tsuchiura, JP;

Kazutoshi Watanabe, Tsuchiura, JP;

Akira Nomoto, Kasumigaura, JP;

Inventors:

Fumimasa Horikiri, Nagareyama, JP;

Kenji Shibata, Tsukuba, JP;

Kazufumi Suenaga, Tsuchiura, JP;

Kazutoshi Watanabe, Tsuchiura, JP;

Akira Nomoto, Kasumigaura, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 41/332 (2013.01); H01L 41/08 (2006.01); H01L 41/187 (2006.01); H01L 41/314 (2013.01); H01L 41/316 (2013.01); H01L 41/318 (2013.01);
U.S. Cl.
CPC ...
H01L 41/332 (2013.01); H01L 41/0805 (2013.01); H01L 41/1873 (2013.01); H01L 41/314 (2013.01); H01L 41/316 (2013.01); H01L 41/318 (2013.01); Y10T 428/24479 (2015.01);
Abstract

A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (KNa)NbO(0.4≦x≦0.7).


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