The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Aug. 24, 2015
Jung Sub Kim, Hwaseong-si, KR;
Yeon Woo Seo, Hwaseong-si, KR;
Dong Gun Lee, Hwaseong-si, KR;
Byung Kyu Chung, Seoul, KR;
Dae Myung Chun, Hwaseong-si, KR;
Soo Jeong Choi, Hwaseong-si, KR;
Jung Sub Kim, Hwaseong-si, KR;
Yeon Woo Seo, Hwaseong-si, KR;
Dong Gun Lee, Hwaseong-si, KR;
Byung Kyu Chung, Seoul, KR;
Dae Myung Chun, Hwaseong-si, KR;
Soo Jeong Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.