The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jul. 03, 2013
Applicant:
Koninklijke Philips N.v., Eindhoven, NL;
Inventors:
Patrick Nolan Grillot, San Jose, CA (US);
Isaac Harshman Wildeson, San Jose, CA (US);
Tigran Nshanian, Santa Clara, CA (US);
Parijan Pramil Deb, San Jose, CA (US);
Assignee:
Koninklijke Philips N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/305 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H01L 2224/48095 (2013.01); H01L 2224/73265 (2013.01);
Abstract
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.