The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jan. 12, 2015
Synopsys, Inc., Mountain View, CA (US);
Andrew E. Horch, Seattle, WA (US);
Martin Luc Cecil Arthur Niset, Seattle, WA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
A nonvolatile memory ('NVM') bitcell includes a source and a drain formed in an active region of a substrate and separated by a channel region in the active region. A gate stack formed over the substrate includes a gate formed on an oxide and at least one sidewall spacer formed around the gate. A charge trapping layer is formed on an opposite side of the sidewall spacer from the gate, where at least a portion of the charge trapping layer acts as a floating gate for the bitcell. The bitcell further includes a salicide block covering the floating gate portion of the charge trapping layer. An contact (sometimes referred to as a bar contact) physically contacts the salicide block above the floating gate portion of the charge trapping layer.