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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406805 B1

PDFFull Text
Date of Patent:
Aug. 02, 2016

Filed:

Jun. 25, 2015

Fin-fet

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chen-Hua Tsai, Hsinchu County, TW;

Rai-Min Huang, Taipei, TW;

Sheng-Huei Dai, Taitung County, TW;

Chun-Hsien Lin, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Leslie Pilar Cruz

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 29/1054 (2013.01); H01L 29/16 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 21/02647 (2013.01); H01L 21/2022 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A Fin-FET and a method of forming the Fin-FET are provided. A substrate is provided, and then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.

Find Patent Forward Citations

Tsai, Chen-Hua. (2016). Fin-fet (U.S. Patent No. 9406805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9406805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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