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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406797 B1

PDFFull Text
Expired
Date of Patent:
Aug. 02, 2016

Filed:

Mar. 07, 2014

Semiconductor integrated circuit with dislocations

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shiu-Ko JangJian, Tainan, TW;

Chun-Chieh Wang, Kaohsiung, TW;

Shih-Chieh Chang, Taipei, TW;

Ying-Min Chou, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

David Vu

Assistant Examiner:

Brandon Fox

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/3105 (2006.01); H01L 21/324 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/32 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7847 (2013.01); H01L 21/02362 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/31055 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/32 (2013.01); H01L 29/41725 (2013.01); H01L 29/66575 (2013.01); H01L 29/78 (2013.01); H01L 29/7843 (2013.01); H01L 29/7848 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes proving a substrate. The substrate includes a gate stack over the substrate and source/drain regions separated by the gate stack. A first dislocation with a first pinch-off point is formed within the source/drain region with a first depth. A second dislocation with a second pinch-off point is formed within the source/drain region at a second depth. The second depth is substantial smaller than the first depth.

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