The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Dec. 04, 2014
International Business Machines Corporation, Armonk, NY (US);
Russell H. Arndt, Fishkill, NY (US);
Babar A. Khan, Ossining, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method including forming a deep trench in a semiconductor-on-insulator substrate including an SOI layer directly on top of a buried oxide layer directly on top of a base substrate, masking only a top surface of the SOI layer and a sidewall of the SOI layer exposed within an upper portion of the deep trench with a dielectric material without masking any surface of the base substrate exposed within a lower portion of the deep trench, and forming a bottle shaped trench by etching the base substrate exposed in the lower portion of the deep trench selective to the dielectric material and the buried oxide layer.