The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Apr. 15, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Thomas N. Adam, Slingerlands, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Balasubramanian Pranatharthi Haran, Watervliet, NY (US);

Shom Ponoth, Los Angeles, CA (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 27/1203 (2013.01); H01L 27/1211 (2013.01);
Abstract

Integrated passive devices for silicon on insulator (SOI) FinFET technologies and methods of manufacture are disclosed. The method includes forming a passive device on a substrate on insulator material. The method further includes removing a portion of the insulator material to expose an underside surface of the substrate on insulator material. The method further includes forming material on the underside surface of the substrate on insulator material, thereby locally thickening the substrate on insulator material under the passive device.


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