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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406583 B1

PDFFull Text
Date of Patent:
Aug. 02, 2016

Filed:

Feb. 14, 2014

Cof type semiconductor package and method of manufacturing the same

Applicant:

Dongbu Hitek Co., Ltd., Seoul, KR;

Inventors:

Sung Jin Kim, Gyeonggi-do, KR;

Jun Il Kim, Gyeonggi-do, KR;

Hag Mo Kim, Gyeonggi-do, KR;

Assignee:

Dongbu Hitek Co., Ltd., Seoul, KR;

Attorney:

Patterson Thuente Pedersen, P.A.

Primary Examiner:

Jasmine Clark

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/538 (2006.01); H01L 23/535 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); H01L 21/563 (2013.01); H01L 23/293 (2013.01); H01L 23/295 (2013.01); H01L 23/3121 (2013.01); H01L 23/3157 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 23/4985 (2013.01); H01L 23/535 (2013.01); H01L 23/5387 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13144 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/14 (2013.01);
Abstract

Provided is a chip on film (COF) type semiconductor package. The COF type semiconductor device includes a flexible film, an electrode pattern formed on the flexible film, a semiconductor device disposed on the electrode pattern, a conductive pad disposed between the electrode pattern and the semiconductor device to electrically connect the semiconductor device with the electrode pattern, and a first protective layer which seals the conductive pad and the semiconductor device and is formed on a portion of the electrode pattern and the semiconductor device. The first protective layer includes a heat conductive material for dissipating heat generated from the semiconductor device.

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