The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jan. 07, 2015
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventors:

Takayuki Abe, Kanagawa, JP;

Tetsuo Yamaguchi, Kanagawa, JP;

Assignee:

NUFLARE TECHNOLOGY, INC., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G03F 1/84 (2013.01);
Abstract

An exposure mask fabrication method includes measuring and storing defect position data, for each EUV exposure mask blank, that indicates the position of at least one defect in each of plural EUV exposure mask blanks, inputting pattern data defining a figure pattern to be written, searching, when the figure pattern is written, in plural EUV exposure mask blanks, an EUV exposure mask blank where the figure pattern can be arranged such that the number of defects not located in a light shielding region is less than or equal to a threshold value, based on the arrangement position of the figure pattern in the pattern data, using the defect position data for each EUV exposure mask blank, and writing the figure pattern on a searched EUV exposure mask blank such that the number of defects not located in the light shielding region is less than or equal to the threshold value.


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