The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Nov. 21, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Manfred Engelhardt, Villach-Landskron, AT;
Johannes Baumgartl, Riegersdorf, AT;
Manfred Kotek, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/8234 (2006.01); H01L 21/306 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8234 (2013.01); H01L 21/30604 (2013.01); H01L 21/30612 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 21/26506 (2013.01); H01L 29/6659 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01);
Abstract
In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.