The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Apr. 07, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jian-Cun Ke, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
Kun-Yuan Lo, Tainan, TW;
Chia-Fu Hsu, Tainan, TW;
Shao-Wei Wang, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 21/823828 (2013.01); H01L 21/823857 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/7834 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.