The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Sep. 12, 2012
Yu-ming Lin, West Harrison, NY (US);
Jeng-bang Yau, Yorktown Heights, NY (US);
Yu-Ming Lin, West Harrison, NY (US);
Jeng-Bang Yau, Yorktown Heights, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming a transistor comprises forming a conducting substrate layer, forming a dielectric layer over the conducting substrate layer, forming a channel over at least a portion of the dielectric layer and forming first and second source/drain regions contacting respective first and second portions of the channel. The channel comprises a thin-film carbon material. The conducting substrate layer, the dielectric layer, the channel and the first and second source/drain regions are formed such that exposure to radiation causes a change in a threshold voltage of the transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile