The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Nov. 25, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Soo-Yeon Jeong, Bucheon-si, KR;
Myeong-Cheol Kim, Suwon-si, KR;
Do-Hyoung Kim, Hwaseong-si, KR;
Do-Haing Lee, Hwaseong-si, KR;
Nam-Myun Cho, Seoul, KR;
In-Ho Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.