The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Oct. 07, 2013
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/498 (2006.01); C04B 37/02 (2006.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); C04B 37/026 (2013.01); H01L 23/3735 (2013.01); H01L 23/473 (2013.01); H01L 23/49822 (2013.01); H01L 24/83 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); C04B 2237/06 (2013.01); C04B 2237/125 (2013.01); C04B 2237/126 (2013.01); C04B 2237/366 (2013.01); C04B 2237/402 (2013.01); C04B 2237/597 (2013.01); C04B 2237/708 (2013.01); C04B 2237/72 (2013.01); H01L 33/641 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01);
Abstract
A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.