The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Jun. 15, 2010
Applicants:

Etsu Takeuchi, Tokyo, JP;

Junya Kusunoki, Tokyo, JP;

Hiromichi Sugiyama, Tokyo, JP;

Toshiharu Kuboyama, Tokyo, JP;

Masakazu Kawata, Tokyo, JP;

Inventors:

Etsu Takeuchi, Tokyo, JP;

Junya Kusunoki, Tokyo, JP;

Hiromichi Sugiyama, Tokyo, JP;

Toshiharu Kuboyama, Tokyo, JP;

Masakazu Kawata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); C09J 169/00 (2006.01); C09D 177/00 (2006.01); C09D 179/08 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
C09J 169/00 (2013.01); C09D 177/00 (2013.01); C09D 179/08 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68386 (2013.01);
Abstract

To provide a temporary bonding adhesive for a semiconductor wafer that reduces damage to a semiconductor wafer, makes it readily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using this. A temporary bonding adhesive for a semiconductor wafer, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition whereof the 50% weight loss temperature decreases after irradiation by active energy rays.


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