The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Feb. 05, 2016
Tokyo Electron Limited, Tokyo, JP;
Kosuke Imafuku, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A silicon focus ring in a processing chamber of a plasma etching apparatus is provided. The silicon focus ring comprises: silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of an electrical resistance of the silicon focus ring; a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring; and impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring. The target value of the electrical resistance of the silicon focus ring is about 2Ω.