The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9397292 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 19, 2016

Filed:

Oct. 02, 2014
Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Pragati Kumar, Beaverton, OR (US);

Sean Barstow, San Jose, CA (US);

Tony P. Chiang, Campbell, CA (US);

Sunil Shanker, Santa Clara, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1633 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01);
Abstract

Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.


Find Patent Forward Citations

Kumar, Pragati. (2016). Methods for forming resistive switching memory elements by heating deposited layers (U.S. Patent No. 9397292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397292

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