The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jul. 22, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ying-Chieh Tsai, Chiayi, TW;

Wing-Chor Chan, Hsinchu, TW;

Shyi-Yuan Wu, Hsinchu, TW;

Jeng Gong, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/0696 (2013.01); H01L 29/083 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01);
Abstract

A semiconductor device includes a substrate, a first doped well disposed in the substrate, a second doped well disposed in the substrate adjacent to a first side of the first doped well, a buffer region disposed in the first doped well adjacent to a second and opposite side of the first doped well, a gate structure disposed above the first side of the first doped well and extending along a first horizontal direction, a first contact region disposed in the buffer region toward the second side of the first doped well, a second contact region disposed in the buffer region adjacent to the first contact region, and a doped region disposed in the buffer region under the first contact region.


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