The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jul. 27, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Yen-Liang Wu, Taipei, TW;
Chung-Fu Chang, Tainan, TW;
Yu-Hsiang Hung, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Man-Ling Lu, Taoyuan County, TW;
Chia-Jong Liu, Ping-Tung County, TW;
Wen-Jiun Shen, Yunlin County, TW;
Yi-Wei Chen, Taichung, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A fabrication method of a semiconductor structure includes the following steps. First of all, a gate structure is provided on a substrate, and a first material layer is formed on the substrate and the gate structure. Next, boron dopant is implanted to the substrate, at two sides of the gate structure, to form a first doped region, and P type conductive dopant is implanted to the substrate, at the two sides of the gate structure, to form a second doped region. As following, a second material layer is formed on the first material layer. Finally, the second material layer, the first material layer and the substrate at the two sides of the gate structure are etched sequentially, and a recess is formed in the substrate, at the two sides of the gate structure, wherein the recess is positioned within the first doped region.