The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Aug. 28, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Yong Tian Hou, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/495 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823857 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/42364 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 29/66651 (2013.01); H01L 29/7848 (2013.01); H01L 29/66636 (2013.01);
Abstract
A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.
Quick Actions:
Hou, Yong. (2016). Semiconductor device having metal gate and manufacturing method thereof (U.S. Patent No. 9397184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397184
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile