The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Apr. 10, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Hsin-Liang Chen, Hsinchu, TW;
Ying-Chieh Tsai, Chiayi, TW;
Wing-Chor Chan, Hsinchu, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes first metal-on-semiconductor (MOS), second MOS, and bipolar junction (BJ) structures formed in a substrate. The first MOS structure includes first drain, first channel, and first source regions arranged along a first direction. The first MOS structure further includes a drain electrode formed over and conductively coupled to the first drain region, and a body region formed below and conductively coupled to the channel region. The second MOS structure includes second drain, second channel, and second source regions arranged along a second direction different from the first direction. The BJ structure includes emitter, base, and collector regions. The first source region and the second drain region share a first common semiconductor region in the substrate. The drain electrode and the base region share a second common semiconductor region in the substrate. The body region and the collector region share a third common semiconductor region in the substrate.