The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jan. 07, 2015
Applicant:

Shinko Electric Industries Co., Ltd., Nagano-ken, JP;

Inventors:

Yukinori Hatori, Nagano, JP;

Takashi Ozawa, Nagano, JP;

Assignee:

Shinko Electric Industries Co., Ltd., Nagano-shi, Nagano-ken, unknown;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 25/075 (2006.01); H01L 25/04 (2014.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/16 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 25/043 (2013.01); H01L 25/0657 (2013.01); H01L 25/0756 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/12 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a wiring layer formed on a first surface of a first insulation layer and including an external connection pad and an internal connection pad located at an inner side of the external connection pad. A semiconductor element facing the first surface of the first insulation layer includes an electrode pad located corresponding to the internal connection pad, a bump formed on the electrode pad and connected to the internal connection pad, and a circuit element region defined in a first surface of the semiconductor element at an inner side of the electrode pad. A second insulation layer fills a gap between the first surfaces of the semiconductor element and the first insulation layer. A third insulation layer covers a second surface of the semiconductor element and the second insulation layer and includes an opening that exposes the external connection pad connected to an external connection terminal.


Find Patent Forward Citations

Hatori, Yukinori. (2016). Semiconductor device (U.S. Patent No. 9397061). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9397061

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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