The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Apr. 13, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Haoquan Fang, Sunnyvale, CA (US);

Yuk-Hong Ting, Fremont, CA (US);

David Cheung, Foster City, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/10 (2013.01); C23C 16/45544 (2013.01); C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01J 37/32449 (2013.01); H01L 21/0262 (2013.01); H01L 21/0273 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/31058 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/67253 (2013.01);
Abstract

Systems and methods for reducing copper contamination in a substrate processing system include performing a plasma process on a substrate in a processing chamber of a substrate processing system. A component is located in the processing chamber and is made of an alloy including copper. The plasma process uses a process gas mixture including molecular hydrogen. Prior to performing the plasma process on the substrate and before the substrate is arranged in the processing chamber, the component is conditioned in the processing chamber using a conditioning plasma process that includes a process gas mixture including molecular oxygen and forming gas.


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