The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Nov. 03, 2011
Applicants:

Franz Hirler, Isen, DE;

Anton Mauder, Kolbemoor, DE;

Hermann Gruber, Woerth an der Donau, DE;

Hubert Rothleitner, Villach, AT;

Andreas Peter Meiser, Sauerlach, DE;

Inventors:

Franz Hirler, Isen, DE;

Anton Mauder, Kolbemoor, DE;

Hermann Gruber, Woerth an der Donau, DE;

Hubert Rothleitner, Villach, AT;

Andreas Peter Meiser, Sauerlach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/76224 (2013.01); H01L 23/481 (2013.01); H01L 29/0653 (2013.01); H01L 29/42372 (2013.01); H01L 29/7397 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 21/823481 (2013.01); H01L 24/16 (2013.01); H01L 27/088 (2013.01); H01L 29/402 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 29/456 (2013.01); H01L 29/66734 (2013.01); H01L 2224/16245 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/12035 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01);
Abstract

A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.


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