The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Sep. 09, 2011
Sarit Dhar, Cary, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Sei-hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Erik Maki, Wake Forest, NC (US);
Jason Gurganus, Raleigh, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
Sarit Dhar, Cary, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Erik Maki, Wake Forest, NC (US);
Jason Gurganus, Raleigh, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile