The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jul. 18, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shyam Sunder Raghunathan, Sunnyvale, CA (US);

Pranav Kalavade, San Jose, CA (US);

Krishna K. Parat, Palo Alto, CA (US);

Charan Srinivasan, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/3427 (2013.01);
Abstract

Memories and methods for programming memories with multi-level pass signals are provided. One method includes programming cells of the memory selected to be programmed to a particular target data state of the memory, using program disturb to program cells of the memory selected to be programmed to target data states that are lower than the particular target data state while programming cells of the memory selected to be programmed to the particular target data state, and boosting a channel voltage for cells of the memory selected to be programmed to the target data states that are lower than the particular target data state. Boosting may include using a multi-step pass signal.


Find Patent Forward Citations

Loading…