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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9394178 B1

PDFFull Text
Date of Patent:
Jul. 19, 2016

Filed:

Aug. 03, 2015

Wafer scale epitaxial graphene transfer

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Christos D. Dimitrakopoulos, Baldwin Place, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

James B. Hannon, Lake Lincolndale, NY (US);

Jeehwan Kim, White Plains, NY (US);

Hongsik Park, Yorktown Heights, NY (US);

Dirk Pfeiffer, Croton on Hudson, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Louis J. Percello

Primary Examiner:

Shamim Ahmed

Assistant Examiner:

Bradford Gates

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H05K 3/04 (2006.01); C01B 31/04 (2006.01); B32B 43/00 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C01B 31/0446 (2013.01); B32B 43/006 (2013.01); H01L 21/0272 (2013.01); H01L 21/02378 (2013.01); H01L 21/02527 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 29/1606 (2013.01); H05K 3/048 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01); Y10T 156/11 (2015.01); Y10T 156/1153 (2015.01);
Abstract

A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

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