The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Aug. 11, 2015
United Microelectronics Corporation, Hsinchu, TW;
Shih Chieh Pu, New Taipei, TW;
Ming-Tsung Lee, Luodong Township, TW;
Cheng-Hua Yang, Hsinchu, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a substrate; a deep well region disposed in the substrate; an element region disposed in the substrate and in the deep well region; a drain region disposed in the substrate, in the deep well region, and surrounding the element region; a gate structure disposed on the surface of the substrate, adjacent to the deep well region, and surrounding the drain region; a well region disposed in the substrate, in the deep well region, and surrounding the gate structure; a source region disposed in the substrate, in the well region, and surrounding the gate structure; a body contact region disposed separately from the source region in the well region and surrounding the source region; and an annular doped region disposed separately from the deep well region in the substrate and surrounding the deep well region.