The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Aug. 28, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 27/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 21/28088 (2013.01); H01L 21/28105 (2013.01); H01L 21/28132 (2013.01); H01L 23/5223 (2013.01); H01L 27/0629 (2013.01); H01L 28/86 (2013.01); H01L 29/4966 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided, including forming a gate electrode of a dummy transistor device on a semiconductor substrate, forming a high-k material layer over and adjacent to the gate electrode and forming a metal layer on the high-k material layer over and adjacent to the gate electrode to form a capacitor.