The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jul. 21, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chang-Jae Yang, Seoul, KR;
Sang-Su Kim, Yongin-si, KR;
Jae-Hwan Lee, Seoul, KR;
Jung-Dal Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on the first and second fin structures, respectively, and a gate dielectric layer between each of the first and second fin structures and the first and second gate electrodes, respectively. Each of the first and second fin structures includes a buffer pattern on the substrate, a channel pattern on the buffer pattern, and an etch stop pattern provided between the channel pattern and the substrate. The etch stop pattern includes a material having an etch resistivity greater than that of the buffer pattern.