The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Mar. 25, 2011
Koji Tsuzukihashi, Akita, JP;
Hiroshi Ikeda, Akita, JP;
Masahiro Kanai, Akita, JP;
Saburo Wakita, Noda, JP;
Koji Tsuzukihashi, Akita, JP;
Hiroshi Ikeda, Akita, JP;
Masahiro Kanai, Akita, JP;
Saburo Wakita, Noda, JP;
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD., Akita-Shi, JP;
Abstract
A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X<30 mm), a second zone from X to Y in height (30 mm≦Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≦V1≦20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≦V2≦5 mm/h.