The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jan. 05, 2016
Ememory Technology Inc., Hsin-Chu, TW;
Cheng-Te Yang, Taichung, TW;
eMemory Technology Inc., Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A charge pump unit capable of reducing reverse current includes a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, and a second PMOS transistor. The first NMOS transistor and the first PMOS transistor are coupled in series and are controlled by a first clock signal. The second NMOS transistor and the second PMOS transistor are coupled in series and are controlled by a second clock signal. The first NMOS transistor is for receiving a first input voltage and the second NMOS transistor is for receiving a second input voltage. The first clock signal and the second clock signal transit at different time points. A rising edge of the first clock signal leads a respective falling edge of the second clock signal.