The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Apr. 27, 2013
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventor:

Jun-Fei Zheng, Westport, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/124 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01); H01L 45/1691 (2013.01);
Abstract

A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity.


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