The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventor:
Huang-Kui Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/28035 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 29/0653 (2013.01); H01L 29/1037 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/4916 (2013.01); H01L 29/66795 (2013.01);
Abstract
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure also includes a gate electrode formed over the fin structure, and the gate electrode has a grid-like pattern when seen from a top-view.