The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Nov. 20, 2014
United Microelectronics Corporation, Hsinchu, TW;
Yen-Liang Wu, Taipei, TW;
Chung-Fu Chang, Tainan, TW;
Wen-Jiun Shen, Douliou, TW;
Man-Ling Lu, Gueishan Township, TW;
Chia-Jong Liu, Gaoshu Township, TW;
Yi-Wei Chen, Taichung, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.