The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Dec. 06, 2012
Ze Chen, Tokyo, JP;
Tsuyoshi Kawakami, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
The termination region includes a ring region (LNFLR). A plurality of ring-shaped P-type ring layers are regularly arranged in the ring region (LNFLR). The ring region (LNFLR) is divided into a plurality of units which include the plurality of P-type ring layers respectively. A width of each unit is constant. A total number of P-type impurities in the ring region (LNFLR) is N, the target withstand voltage is BV [V], a width of each unit is SandL [μm], and the number of the plurality of units is num, following relationships are satisfied. N≧(M×BV), M=10to 10, γ=0.55 to 1.95, SandL×num×Ecri≧2×α×BV, Ecri=2.0 to 3.0×10[V/cm], α=10to 10. Widths of the P-type ring layers of the plurality of units linearly decrease toward an outside of the termination region.