The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Oct. 23, 2015
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Masao Morimoto, Tokyo, JP;

Noriaki Maeda, Tokyo, JP;

Yasuhisa Shimazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/02 (2006.01); G11C 11/412 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G06F 17/5072 (2013.01); G11C 11/412 (2013.01); H01L 27/0207 (2013.01); H01L 27/1116 (2013.01);
Abstract

A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.


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