The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Apr. 04, 2011
Applicants:
Tadahiro Ohmi, Sendai, JP;
Hiroaki Tanaka, Sendai, JP;
Inventors:
Tadahiro Ohmi, Sendai, JP;
Hiroaki Tanaka, Sendai, JP;
Assignee:
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, Sendai-Shi, Miyagi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823814 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01);
Abstract
This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.