The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Jan. 24, 2014
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chieh-Te Chen, Kaohsiung, TW;

Feng-Yi Chang, Tainan, TW;

Hsuan-Hsu Chen, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0276 (2013.01); H01L 21/31133 (2013.01); H01L 21/76816 (2013.01);
Abstract

A method of performing an etching process is provided. A substrate is provided, wherein a first region and a second region are defined on the substrate, and an overlapping region of the first region and the second region is defined as a third region. A tri-layer structure comprising an organic layer, a bottom anti-reflection coating (BARC), and a photoresist layer is formed on the substrate. The photoresist layer and the BARC in the second region are removed. An etching process is performed to remove the organic layer in the second region by using the BARC and/or the photoresist layer as a mask, wherein the etching process uses an etchant comprises CO.


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