The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 08, 2014
United Microelectronics Corp., Hsinchu, TW;
Po-Cheng Huang, Kaohsiung, TW;
Yu-Ting Li, Chiayi, TW;
Jen-Chieh Lin, Kaohsiung, TW;
Kun-Ju Li, Tainan, TW;
Chang-Hung Kung, Kaohsiung, TW;
Yue-Han Wu, Taitung County, TW;
Chih-Chien Liu, Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a first area with a plurality of first gates and a second area with a plurality of second gates is provided, wherein the adjacent first gates and the adjacent second gates separated by an insulation, and a top surface of the insulation has a plurality of recesses. Then, a capping layer is formed over the first gate, the second gates and the insulation, and filling the recesses. The capping layer is removed until reaching the top surface of the insulation, thereby forming the insulating depositions filling up the recesses, wherein the upper surfaces of the insulating depositions are substantially aligned with the top surface of the insulation.