The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Nov. 21, 2014
Tokyo Electron Limited, Tokyo, JP;
Tomoki Suemasa, Yamanashi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying HF gas and NHgas as reactant gases and a diluent gas to the chamber to conduct a reaction treatment in which the HF gas and the NHgas are reacted with the silicon oxide film. Thereafter, a heating process is performed to remove a reaction product generated by the reaction treatment. In the reaction treatment, a pressure in the chamber is increased to a predetermined value by increasing a flow rate of the diluent gas so that no etching residue remains and an etching shape has high verticality after the heating process.