The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jul. 18, 2014
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A metal gate process for polishing and oxidizing includes the following steps. A first dielectric layer having a trench is formed on a substrate. A barrier layer and a metal layer are formed sequentially to cover the trench and the first dielectric layer. A first chemical mechanical polishing process including a slurry of HOwith the concentration of 0˜0.5 weight percent (wt. %) is performed to polish the metal layer until the barrier layer on the first dielectric layer is exposed. A second chemical mechanical polishing process including a slurry of HOwith the concentration higher than 1 weight percent (wt. %) is performed to polish the barrier layer as well as oxidize a surface of the metal layer remaining in the trench until the first dielectric layer is exposed, thereby a metal oxide layer being formed on the metal layer.