The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Jun. 18, 2015
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Yu-Hsiung Tsai, Hsinchu, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/14 (2006.01); H01L 27/115 (2006.01); G11C 5/06 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); G11C 16/08 (2006.01); H01L 27/092 (2006.01); H02M 1/14 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 5/063 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); H01L 27/092 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 29/0642 (2013.01); H01L 29/1095 (2013.01); H02M 1/14 (2013.01); G11C 16/26 (2013.01); H02M 3/07 (2013.01);
Abstract

A nonvolatile memory includes a memory array. The memory array is connected to m word lines and (2+n) bit line pairs. These bit line pairs include an erase bit line pair, a program bit line pair and n data bit line pairs. Each word line is connected with (2+n) differential cells of a corresponding row. The (2+n) differential cells include an erase flag differential cell, a program flag differential cell and n data differential cells. The erase flag differential cell is connected with the erase bit line pair. The program flag differential cell is connected with the program line pair. The n data differential cells are connected with the data line pairs. The n data differential cells are determined as erased cells or programmed cells according to setting conditions of the erase flag differential cell and the program flag differential cell.


Find Patent Forward Citations

Loading…