The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Mar. 17, 2010
Applicants:

Shiro Tsukamoto, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Inventors:

Shiro Tsukamoto, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/14 (2006.01); B22D 21/00 (2006.01); B22D 7/00 (2006.01); B22D 25/02 (2006.01); C23C 14/34 (2006.01); B21J 1/02 (2006.01); B21J 1/04 (2006.01); C22F 1/16 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B21J 1/025 (2013.01); B21J 1/04 (2013.01); C22F 1/16 (2013.01); H01J 37/3426 (2013.01);
Abstract

Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.


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