The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Sep. 30, 2013
Peking University, Beijing, CN;
Ru Huang, Beijing, CN;
Muxi Yu, Beijing, CN;
Yimao Cai, Beijing, CN;
Wenliang Bai, Beijing, CN;
Yinglong Huang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention relates to a highly reliable nonvolatile memory and a manufacturing method thereof. The nonvolatile memory comprises top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. The manufacturing method adopts a method in which a doping method and a double-layer forming method are combined, so that the highly reliable and highly uniform resistive random access memory can be fabricated and accordingly the performance of the memory can be increased.